SiHFBC30S Datasheet | Vishay

FEATURES 600 2.2 - Surface Mount (IRFBC30S, Si HFBC30S) - Low-Profile Through-Hole (IRFBC30L, Si HFBC30L) - Available in Tape and Reel (IRFBC30S, Si HFBC30S) - Dynamic d V/dt Rating - 150 °C Operating Temperature - Fast Switching - Fully Avalanche Rated - Lead (Pb)-free Available Available Ro HS- PLIANT DESCRIPTION I2PAK (TO-262) D2PAK (TO-263) G G D S S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of the acmodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFBC30L, Si HFBC30L) is a available for low-profile applications. ORDERING INFORMATION Package Lead (Pb)-free Sn Pb Note a. See device orientation. D2PAK (TO-263) IRFBC30SPb F Si HFBC30S-E3 IRFBC30S Si HFBC30S D2PAK (TO-263) IRFBC30STRLPb Fa Si HFBC30STL-E3a I2PAK (TO-262) IRFBC30LPb F Si HFBC30L-E3 IRFBC30L Si HFBC30L ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Currente Pulsed Drain Currenta, e Linear Derating Factor Single Pulse Avalanche Energyb, e Avalanche Currenta Repetiitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc, e Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) TA = 25 °C TC = 25 °C VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR PD d V/dt TJ, Tstg for 10 s LIMIT 600 ± 20 3.6 2.3 14 0.59 290 3.6 7.4 3.1 74 3.0 - 55 to + 150 300d UNIT V A W/°C m J A m J W V/ns °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see...