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SiHFBC30S - Power MOSFET

Download the SiHFBC30S datasheet PDF. This datasheet also covers the SiHFBC30L variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • 600 2.2.
  • Surface Mount (IRFBC30S, SiHFBC30S).
  • Low-Profile Through-Hole (IRFBC30L, SiHFBC30L).
  • Available in Tape and Reel (IRFBC30S, SiHFBC30S).
  • Dynamic dV/dt Rating.
  • 150 °C Operating Temperature.
  • Fast Switching.
  • Fully Avalanche Rated.
  • Lead (Pb)-free Available Available RoHS.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SiHFBC30L_VishaySiliconix.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for SiHFBC30S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SiHFBC30S. For precise diagrams, and layout, please refer to the original PDF.

IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4U....

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n) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4U.com VGS = 10 V 31 4.6 17 Single D FEATURES 600 2.2 • Surface Mount (IRFBC30S, SiHFBC30S) • Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) • Available in Tape and Reel (IRFBC30S, SiHFBC30S) • Dynamic dV/dt Rating • 150 °C Operating Temperature • Fast Switching • Fully Avalanche Rated • Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION I2PAK (TO-262) D2PAK (TO-263) G G D S S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance a