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SiHFBC30 - Power MOSFET

General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • 600 2.2.
  • Dynamic dV/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available Available RoHS.

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Full PDF Text Transcription for SiHFBC30 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SiHFBC30. For precise diagrams, and layout, please refer to the original PDF.

IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 31 4.6 17 Single D FEATURES ...

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gs (nC) Qgd (nC) Configuration VGS = 10 V 31 4.6 17 Single D FEATURES 600 2.2 • • • • • • Dynamic dV/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available Available RoHS* COMPLIANT www.DataSheet4U.com DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

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