Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Full PDF Text Transcription for SiHFD320 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
SiHFD320. For precise diagrams, and layout, please refer to the original PDF.
g (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 400 VGS = 10 V 20 3.3 11 Single 1.8 D HVMDIP S G D G S N-Channel MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion RoHS COMPLIANT • End stackable • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
SiHFD320 Datasheet
