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SiHFD320 - Power MOSFET

Description

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Features

  • Dynamic dV/dt rating.
  • Repetitive avalanche rated.
  • For automatic insertion RoHS.

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Datasheet Details

Part number SiHFD320
Manufacturer Vishay Siliconix
File Size 409.07 KB
Description Power MOSFET
Datasheet download datasheet SiHFD320 Datasheet
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Full PDF Text Transcription

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www.vishay.com IRFD320, SiHFD320 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 400 VGS = 10 V 20 3.3 11 Single 1.8 D HVMDIP S G D G S N-Channel MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion RoHS COMPLIANT • End stackable • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
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