SiHFD320 Datasheet | Vishay

FEATURES - Dynamic d V/dt rating - Repetitive avalanche rated - For automatic insertion Ro HS PLIANT - End stackable - Fast switching - Ease of paralleling - Simple drive requirements - Material categorization: for definitions of pliance please see .vishay./doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple binations on standard 0.1" pin centers. The dual drain servers as a thermal link to the mounting surface for power dissipation levels up to 1 W. ORDERING INFORMATION Package Lead (Pb)-free Sn Pb HVMDIP IRFD320Pb F Si HFD320-E3 IRFD320 Si HFD320 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current a Linear Derating Factor Single Pulse Avalanche Energy b Avalanche Current a Repetitive Avalanche Energy a Maximum Power Dissipation Peak Diode Recovery d V/dt c VGS at 10 V TA = 25 °C TA = 100 °C TA = 25 °C VDS VGS EAS IAR EAR PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) d for 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 21 m H, Rg = 25 Ω, IAS = 2.0 A (see fig. 12). c. ISD ≤ 2.0 A, d I/dt ≤ 40 A/μs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. LIMIT 400 ± 20 0.49 0.31 3.9 0.0083 48 0.49 0.10 1.0 4.0 -55 to +150 300 UNIT W/°C m J A m J W V/ns...