SiHFI830G Datasheet | Vishay

FEATURES 500 1.5 - Isolated Package - High Voltage Isolation = 2.5 k VRMS (t = 60 s; f = 60 Hz) - Sink to Lead Creepage Distance = 4.8 mm - Dynamic d V/dt Rating - Low Thermal Resistance - Lead (Pb)-free Available Available Ro HS- PLIANT TO-220 FULLPAK DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in mercial-industrial applications. The molding pound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free Sn Pb TO-220 FULLPAK IRFI830GPb F Si HFI830G-E3 IRFI830G Si HFI830G ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) Mounting Torque Notes a. b. c. d. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). VDD = 50 V, starting TJ = 25 °C, L = 33 m H, RG = 25 Ω, IAS = 3.1 A (see fig. 12). ISD ≤ 3.1 A, d I/dt ≤ 75 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. 1.6 mm from case. Currenta VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR PD d V/dt TJ, Tstg LIMIT 500 ± 20 3.1 2.0 12 0.28 180 3.1 3.5 35 3.5 - 55 to + 150 300d 10 1.1 UNIT V A W/°C m J A m J W V/ns °C lbf - in N- m TC = 25 °C for 10 s 6-32 or M3 screw - Pb containing terminations are not Ro HS pliant, exemptions...