SiHLIZ14G Datasheet | Vishay

FEATURES - Isolated Package - High Voltage Isolation = 2.5 k VRMS (t = 60 s; f = 60 Hz) - Sink to Lead Creepage Distance = 4.8 mm - Logic-Level Gate Drive - RDS(on) Specified at VGS = 4 V and 5 V - Fast Switching - Ease of Paralleling - Lead (Pb)-free Available Available Ro HS- PLIANT TO-220 FULLPAK DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in mercial-industrial applications. The molding pound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free Sn Pb TO-220 FULLPAK IRLIZ14GPb F Si HLIZ14G-E3 IRLIZ14G Si HLIZ14G ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation Peak Diode Recovery d V/dtc Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) Mounting Torque VGS at 5.0 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS PD d V/dt TJ, Tstg LIMIT 60 ± 10 8.0 5.7 32 0.18 68 27 4.5 - 55 to + 175 300d 10 1.1 UNIT V A W/°C m J W V/ns °C lbf - in N- m TC = 25 °C for 10 s 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 1.2 m H, RG = 25 Ω, IAS = 8.0 A (see fig. 12). c. ISD ≤ 10 A, d I/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. - Pb containing terminations are not Ro HS pliant, exemptions may apply Document Number: 91315...