TSFF5210 Datasheet | Vishay

DESCRIPTION TSFF5210 is an infrared, 870 nm emitting diode in Ga Al As double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES - Package type: leaded - Package form: T-1 3/4 - Dimensions (in mm): Ø 5 - Leads with stand-off - Peak wavelength: λp = 870 nm - High reliability - High radiant power - High radiant intensity - Angle of half intensity: ϕ = ± 10° - Low forward voltage - Suitable for high pulse current operation - High modulation bandwidth: fc = 24 MHz - Good spectral matching with Si photodetectors - Material categorization: for definitions of pliance please see .vishay./doc?99912 APPLICATIONS - Infrared video data transmission between camcorder and TV set - Free air data transmission systems with high modulation frequencies or high data transmission rate requirements - Smoke-automatic fire detectors PRODUCT SUMMARY PONENT TSFF5210 Ie (m W/sr) 180 ϕ (°) ± 10 Note - Test conditions see table “Basic Characteristics” λp (nm) 870 tr (ns) 15 ORDERING INFORMATION ORDERING CODE TSFF5210 Note - MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-1¾ Rev. 1.9, 28-Nov-2023 Document Number: 81090 For technical questions, contact: emittertechsupport@vishay. THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT .vishay./doc?91000...