TSFF5210 Description
TSFF5210 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.
TSFF5210 Key Features
- Package type: leaded
- Package form: T-1 3/4
- Dimensions (in mm): Ø 5
- Leads with stand-off
- Peak wavelength: λp = 870 nm
- High reliability
- High radiant power
- High radiant intensity
- Angle of half intensity: ϕ = ± 10°
- Low forward voltage