TSFF5210 - High Speed Infrared Emitting Diode

Description

TSFF5210 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.

Features

Package type: leaded.
Package form: T-1 3/4.
Dimensions (in mm): Ø 5.
Leads with stand-off.
Peak wavelength: λp = 870 nm.
High reliability.
High radiant power.
High radiant intensity.
Angle of half intensity: ϕ = ± 10°.
Low forward voltage.
Suitable for high pulse current operation.
High modulation bandwidth: fc = 24 MHz.
Good spectral matching with Si photodetectors.
Ma.

Vishay Siliconix

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Datasheet Details

Part number	TSFF5210
Manufacturer	Vishay Siliconix
File Size	118.16 KB
Description	High Speed Infrared Emitting Diode
Datasheet	TSFF5210 Datasheet
Additional preview pages of the TSFF5210 datasheet.

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Full PDF Text Transcription

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End of Life - Last Available Purchase Date: 11-October-2023 (PTN-OPT-1278-2023-REV-1) www.vishay.com TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero DESCRIPTION TSFF5210 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.

Published: Jul 7, 2008 |