TSFF5410 - High Speed IR Emitting Diode

Description

TSFF5410 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.

Features

Package type: leaded.
Package form: T-1¾.
Dimensions (in mm): Ø 5.
Leads with stand-off.
Peak wavelength: λp = 870 nm.
High reliability.
High radiant power.
High radiant intensity.
Angle of half intensity: ϕ = ± 22°.
Low forward voltage.
Suitable for high pulse current operation.
High modulation bandwidth: fc = 24 MHz.
Good spectral matching to Si photodetectors.
Materia.

Vishay Siliconix

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Datasheet Details

Part number	TSFF5410
Manufacturer	Vishay Siliconix
File Size	110.21 KB
Description	High Speed IR Emitting Diode
Datasheet	TSFF5410 Datasheet
Additional preview pages of the TSFF5410 datasheet.

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Full PDF Text Transcription

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End of Life - Last Available Purchase Date: 11-October-2023 (PTN-OPT-1278-2023-REV-1) www.vishay.com TSFF5410 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero DESCRIPTION TSFF5410 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.

Published: Jul 7, 2008 |