TSFF5410
TSFF5410 is High Speed IR Emitting Diode manufactured by Vishay.
DESCRIPTION
TSFF5410 is an infrared, 870 nm emitting diode in Ga Al As double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.
FEATURES
- Package type: leaded
- Package form: T-1¾
- Dimensions (in mm): Ø 5
- Leads with stand-off
- Peak wavelength: λp = 870 nm
- High reliability
- High radiant power
- High radiant intensity
- Angle of half intensity: ϕ = ± 22°
- Low forward voltage
- Suitable for high pulse current operation
- High modulation bandwidth: fc = 24 MHz
- Good spectral matching to Si photodetectors
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Infrared video data transmission between camcorder and TV set
- Free air data transmission systems with high modulation frequencies or high data transmission rate requirements
PRODUCT SUMMARY
PONENT TSFF5410
Ie (m W/sr) 70
ϕ (°) ± 22
Note
- Test conditions see table “Basic Characteristics”
λp (nm) 870 tr (ns) 15
ORDERING INFORMATION
ORDERING CODE TSFF5410 Note
- MOQ: minimum order quantity
PACKAGING Bulk
REMARKS MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM T-1¾
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction to ambient tp/T = 0.5, tp = 100 μs tp = 100 μs t ≤ 5 s, 2 mm from case J-STD-051, leads 7 mm, soldered on PCB
VR IF IFM IFSM PV Tj Tamb Tstg Tsd Rth JA
VALUE...
