TSFF5510 Datasheet | Vishay

Description TSFF5510 is an infrared, 870 nm emitting diode in Ga Al As double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted, plastic package. Features .. - - - - - - - - - - - - Package type: leaded Dimensions: T-1¾ (∅ 5 mm) Peak wavelength: λp = 870 nm High reliability High radiant power 21061 e2 Applications - Infrared video data transmission between camcorder and TV set - Free air data transmission systems with high modulation frequencies or high data transmission High radiant intensity Angle of half intensity: ϕ = ± 38° Low forward voltage Suitable for high pulse current operation High modulation bandwidth Good spectral matching to Si photodetectors Lead (Pb)-free ponent in accordance with Ro HS 2002/95/EC and WEEE 2002/96/EC Product Summary ponent Symbol φe Ie TSFF5510 tr, tf ϕ λp Value 55 32 15 ± 38 870 Unit m W m W/sr ns deg nm Ordering Information Ordering code TSFF5510 Note: MOQ: minimum order quantity Packing Bulk Remarks MOQ: 4000 pcs, 4000 pcs/bulk Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Document Number 81835 Rev. 1.0, 07-Feb-08 t ≤ 5 s, 2 mm from case J-STD-051, leads 7 mm soldered on PCB tp/T = 0.5, tp = 100 µs tp = 100 µs Test condition Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd Rth JA Value 5 100 200 1 170 100 - 40 to + 85 - 40 to + 100 260 250 Unit V m A m A A m W °C °C °C °C K/W .vishay. 1 For technical support, contact: emittertechsupport@vishay. Vishay Semiconductors 120 100 80 - Power Dissipation (m W) 160 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 Rth JA = 250 K/W - Forward Current (m A) Rth JA = 250 K/W 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 .. Tamb - Ambient Temperature...