Datasheet4U Logo Datasheet4U.com

BF988 - N-Channel Dual Gate MOS-Fieldeffect Tetrode

Key Features

  • D D D D Integrated gate protection diodes High cross modulation performance Low noise figure High gain 3 4 2 94 9307 96 12647 D High AGC-range D Low feedback capacitance D Low input capacitance G2 G1 1 D BF988 Marking: BF988 Plastic case (TO 50) 1 = Drain, 2 = Source, 3 = Gate 1, 4 = Gate 2 12623 S Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Total power dissipation Channel temperature S.

📥 Download Datasheet

Datasheet Details

Part number BF988
Manufacturer Vishay
File Size 139.15 KB
Description N-Channel Dual Gate MOS-Fieldeffect Tetrode
Datasheet download datasheet BF988 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BF988 Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially VHF- and UHF- tuners.