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BF988 - N-Channel Dual Gate MOS-Fieldeffect Tetrode

Datasheet Summary

Features

  • D D D D Integrated gate protection diodes High cross modulation performance Low noise figure High gain 3 4 2 94 9307 96 12647 D High AGC-range D Low feedback capacitance D Low input capacitance G2 G1 1 D BF988 Marking: BF988 Plastic case (TO 50) 1 = Drain, 2 = Source, 3 = Gate 1, 4 = Gate 2 12623 S Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Total power dissipation Channel temperature S.

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Datasheet Details

Part number BF988
Manufacturer Vishay Telefunken
File Size 139.15 KB
Description N-Channel Dual Gate MOS-Fieldeffect Tetrode
Datasheet download datasheet BF988 Datasheet
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Full PDF Text Transcription

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BF988 Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially VHF- and UHF- tuners.
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