BFR96T Datasheet | Vishay

Features D High power gain D Low noise figure D High transition frequency 94 9308 BFR96T Marking: BFR96T Plastic case (TO 50) 1 = Collector, 2 = Emitter, 3 = Base Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 20 15 2.5 75 500 175 - 65 to +150 Unit V V V m A m W °C °C Tamb ≤ 60 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35mm Cu Symbol Rth JA Value 230 Unit K/W Document Number 85036 Rev. 3, 20-Jan-99 .vishay.de - Fax Back +1-408-970-5600 1 (10) Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage DC forward current transfer ratio Test Conditions VCE = 20 V, VBE = 0 VCB = 10 V, IE = 0 VEB = 2.5 V, IC = 0 IC = 5 m A, IB = 0 VCE = 10 V, IC = 50 m A VCE = 10 V, IC = 75 m A Symbol Min Typ Max Unit ICES 100 m A ICBO 100 n A IEBO 10 m A V(BR)CEO 15 V h FE 25 75 150 h FE 25 Electrical AC Characteristics Tamb = 25_C, unless otherwise specified Parameter Transition frequency Collector-base capacitance Collector-emitter capacitance Emitter-base capacitance Noise figure Test Conditions VCE = 10 V, IC = 50 m A, f = 500 MHz VCB = 10 V, f = 1 MHz VCE = 10 V, f = 1 MHz VEB = 0.5 V, f = 1 MHz VCE = 10 V, IC = 50 m A, ZS = 50 W, f = 500 MHz VCE = 10 V, IC = 50 m A, ZS = 50 W, f = 800 MHz VCE = 10 V, IC = 50 m A, ZS = 50 W, ZL = ZLopt, f = 500 MHz VCE = 10 V, IC = 50 m A, d IM = 60 d B, f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 W VCE = 10 V, IC = 50 m A, f = 800 MHz Symbol f T Ccb Cce Ceb F F Gpe V1 = V2 IP3 Min 4 Typ 5 0.85 0.3 3.0 3.3 3.8...