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1N1183A - Power Silicon Rectifier Diodes

Download the 1N1183A datasheet PDF. This datasheet also covers the 1N1183 variant, as both devices belong to the same power silicon rectifier diodes family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low leakage current series.
  • Good surge current capability up to 1000 A.
  • Can be supplied to meet stringent military, aerospace and other high reliability requirements.
  • Compliant to RoHS directive 2002/95/EC DO-203AB (DO-5).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (1N1183-Vishay.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 1N1183A
Manufacturer Vishay
File Size 291.62 KB
Description Power Silicon Rectifier Diodes
Datasheet download datasheet 1N1183A Datasheet

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Other Datasheets by Vishay

Part Number Description
1N1183 Power Silicon Rectifier Diodes
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
1N1183, 1N3765, 1N1183A, 1N2128A Series Vishay High Power Products Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military, aerospace and other high reliability requirements • Compliant to RoHS directive 2002/95/EC DO-203AB (DO-5) PRODUCT SUMMARY IF(AV) 35 A/40 A/60 A MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS 1N1183 1N3765 IF(AV) IFSM TC 50 Hz 60 Hz 35 (1) 140 (1) 480 500 (1) 35 (1) 140 (1) 380 400 (1) I2t 50 Hz 60 Hz 1140 1040 730 670 I2√t VRRM Range 16 100 50 to 600 (1) 10 300 700 to 1000 (1) Note (1) JEDEC registered values ELECTRICAL SPECIFICATIONS 1N1183A 40 (1) 150 (1) 765 800 (1) 2900 2650 41 000 50 to 600 (1) 1N2