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1N1183A - Silicon Standard Recovery Diode

Key Features

  • High Surge Capability.
  • Types up to 600 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N1183A thru 1N1190AR VRRM = 50 V - 600 V IF = 40 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N1183A(R) 1N1184A(R) 1N1186A(R) 1N1188A(R) 1N1190A(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous for.

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Datasheet Details

Part number 1N1183A
Manufacturer GeneSiC
File Size 747.60 KB
Description Silicon Standard Recovery Diode
Datasheet download datasheet 1N1183A Datasheet

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Silicon Standard Recovery Diode Features • High Surge Capability • Types up to 600 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N1183A thru 1N1190AR VRRM = 50 V - 600 V IF = 40 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N1183A(R) 1N1184A(R) 1N1186A(R) 1N1188A(R) 1N1190A(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current VRRM VRMS VDC IF TC ≤ 150 °C 50 100 200 35 70 140 50 100 200 40 40 40 Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tp = 8.