HS817B Description
The HS817 series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package. EN 60065, EN 60950-1:2006 FIMKO UL file no. G is not marked on the body.
HS817B Key Features
- Rated impulse voltage (transient overvoltage) VIOTM = 6 kVpeak
- Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV
- Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS
- Rated recurring peak voltage (repetitive) VIORM = 850 Vpeak
- Creepage current resistance according to IEC 112, parative tracking index: CTI 250
- Thickness through insulation 0.4 mm
- Isolation materials according to UL 94 V-O
- Pollution degree 2 (resp. IEC 664)
- Climatic classification 55/100/21 (IEC 68 part 1)
- Low temperature coefficient of CTR