Vishay HS817G
The HS817 series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package.FEATURES
C 4 E 3● Rated impulse voltage (transient overvoltage) VIOTM = 6 kVpeak
● Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV
● Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS
● Rated recurring peak voltage (repetitive) VIORM = 850 Vpeak
● Creepage current resistance according to IEC 112, comparative tracking index: CTI 250
● Thickness through insulation 0.4 mm
● Isolation materials according to UL 94 V-O
● Pollution degree 2 (resp. IEC 664)
● Climatic classification 55/100/21 (IEC 68 part 1)
● Low temperature coefficient of CTR
● G = leadform 10.16 mm; provides creepage distance > 8 mm, suffix letter “G” is not marked on the optocoupler
● Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 17197_7 1 A 2 C 17197_4
DESCRIPTION
AGENCY APPROVALS●
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● BSI: EN 60065, EN 60950-1:2006 FIMKO UL file no. E52744 cUL tested to CSA 22.2 bulletin 5A
APPLICATIONS
● Switch-mode power supplies● Line receiver
● Computer peripheral in...