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Dual N-Channel 30 V (D-S) MOSFET
Si1036X
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 30
RDS(on) () MAX. 0.540 at VGS = 4.5 V 0.600 at VGS = 2.5 V 0.700 at VGS = 1.8 V 1.100 at VGS = 1.5 V
ID (A) 0.5 0.2 0.2 0.05
Qg (TYP.) 0.72 nC
SC-89 Dual (6 leads) S2
G2 4 D1 5 6
3 2 D2 1 G1 S1 Top View
Marking Code: B Ordering Information: Si1036X-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES • TrenchFET® Power MOSFET • 100 % Rg tested • Gate-source ESD protected: 1000 V • Material categorization:
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SI1036X Datasheet
