Datasheet4U Logo Datasheet4U.com

SI3429EDV - MOSFET

Key Features

  • TrenchFET® power MOSFET.
  • 100 % Rg tested.
  • Built-in ESD protection - Typical ESD performance 3000 V.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SI3420 N-channel FET MCC
SI3420A N-channel MOSFET MCC
SI3420DV N-Channel MOSFET Vishay Siliconix
SI3422DV N-Channel MOSFET Vishay Siliconix
SI3424CDV N-Channel MOSFET Vishay Siliconix

Other Datasheets by Vishay

Part Number Description
SI3424BDV MOSFET
SI3407DV P-Channel MOSFET
Si3433 P-Channel MOSFET
Si3433BDV P-Channel MOSFET
Si3433CDV P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.vishay.com Si3429EDV Vishay Siliconix P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) MAX. 0.0210 at VGS = -4.5 V 0.0240 at VGS = -2.5 V 0.0380 at VGS = -1.8 V ID (A) a, e -8 -8 -8 Qg (TYP.) 43.2 nC TSOP-6 Single S 4 D 5 D 6 1 D Top View 2 D 3 G Marking Code: BM Ordering Information: Si3429EDV-T1-GE3 (lead (Pb)-free and halogen-free) FEATURES • TrenchFET® power MOSFET • 100 % Rg tested • Built-in ESD protection - Typical ESD performance 3000 V • Material categorization: For definitions of compliance please see www.vishay.