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N-Channel 200-V (D-S) MOSFET
Si4464DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
200
0.240 at VGS = 10 V
0.260 at VGS = 6.0 V
ID (A) 2.2 2.1
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • TrenchFET® Power MOSFET • PWM Optimized for Low Qg and Low Rg • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • Primary Side Switch
D
S1 S2 S3 G4
SO-8
8D 7D 6D 5D
Top View
Ordering Information: Si4464DY-T1-E3 (Lead (Pb)-free) Si4464DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
200
V
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current
TA = 25 °C TA = 70 °C
ID
2.
SI4464DY Datasheet
