SI4465DY Datasheet | Vishay

P-Channel 1.8-V (G-S) MOSFET Vishay Siliconix PRODUCT SUMMARY VDS (V) - 8 r DS(on) (W) 0.009 @ VGS = - 4.5 V 0.011 @ VGS = - 2.5 V 0.016 @ VGS = - 1.8 V ID (A) - 14 - 12 - 10 S1 S2 S3 G4 SO-8 8D 7D 6D 5D Top View Ordering Information: Si4465DY-T1 Si4465DY-T1- E3 (Lead (Pb)- free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS VGS - 8 "8 Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C IDM IS PD TJ, Tstg - 14 - 11 - 40 - 2.1 2.5 1.6 - 55 to...