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P-Channel 1.8-V (G-S) MOSFET
Si4465DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
–8
rDS(on) (W)
0.009 @ VGS = –4.5 V 0.011 @ VGS = –2.5 V 0.016 @ VGS = –1.8 V
ID (A)
–14 –12 –10
S1 S2 S3 G4
SO-8
8D 7D 6D 5D
Top View
Ordering Information: Si4465DY-T1 Si4465DY-T1–E3 (Lead (Pb)–free)
S G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS VGS
–8 "8
Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b
Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range
TA = 25_C TA = 70_C
TA = 25_C TA = 70_C
ID
IDM IS
PD TJ, Tstg
–14 –11 –40 –2.1 2.5 1.
SI4465DY Datasheet
