SIE818DF Description
N-Channel 75-V (D-S) MOSFET SiE818DF Vishay Siliconix PRODUCT SUMMARY ID (A)a VDS (V) RDS(on) (Ω)e Silicon Package Limit Limit Qg (Typ.) 75 0.0095 at VGS = 10 V 0.0125 at VGS = 4.5 V 79 69 60 33 nC 60 Package Drawing .vishay./doc?72945 10 9 8 D GS 7.
SIE818DF Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Power MOSFET
- Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
- Leadframe-Based New Encapsulated Package
- Die Not Exposed
- Same Layout Regardless of Die Size
- Low Qgd/Qgs Ratio Helps Prevent Shoot-Through
- 100 % Rg and UIS Tested
- pliant to RoHS directive 2002/95/EC