SiE822DF Description
SiE822DF Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY ID (A)a VDS (V) 20 RDS(on) (Ω) 0.0034 at VGS = 10 V 0.0055 at VGS = 4.5 V Silicon Limit 138 108 Package Qg (Typ.) Limit 50 24 nC.
SiE822DF Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Power MOSFET
- Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
- Leadframe-Based New Encapsulated Package
- Die Not Exposed
- Same Layout Regardless of Die Size
- Low Qgd/Qgs Ratio Helps Prevent Shoot-Through
- 100 % Rg and UIS Tested
- pliant to RoHS directive 2002/95/EC