SIE860DF Description
New Product N-Channel 30-V (D-S) MOSFET SiE860DF Vishay Siliconix PRODUCT SUMMARY ID (A) VDS (V) RDS(on) (Ω)e Silicon Package Limit Limit Qg (Typ.) 0.0021 at VGS = 10 V 178 30 0.0028 at VGS = 4.5 V 154 60a 34 nC 60a Package Drawing .vishay./doc?68796 10 9 8.
SIE860DF Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Gen III Power MOSFET
- Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
- Leadframe-Based New Encapsulated Package
- Die Not Exposed
- Same Layout Regardless of Die Size
- Low Qgd/Qgs Ratio Helps Prevent Shoot-Through
- 100 % Rg and UIS Tested
- pliant to RoHS directive 2002/95/EC