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N-Channel 30 V (D-S) MOSFET
SiR172ADP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
30 0.0085 at VGS = 10 V 0.0105 at VGS = 4.5 V
ID (A)a, g 24 24
Qg (Typ.) 12.8 nC
PowerPAK SO-8
FEATURES
• TrenchFET® Power MOSFET • Low Thermal Resistance PowerPAK® Package
with Low 1.07 mm Profile
• Optimized for High-Side Synchronous Rectifier Operation
• 100 % Rg and UIS Tested • Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
6.15 mm
S 1S
5.
SIR172ADP Datasheet
