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SIR172DP - N-Channel MOSFET

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFET.
  • Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile.
  • Optimized for High-Side Synchronous Rectifier Operation.
  • 100 % Rg and UIS Tested.
  • Compliant to RoHS Directive 2002/95/EC 6.15 mm S 1S 5.15 mm 2 S 3G 4 D 8D 7 D 6 D 5 Bottom View Ordering Information: SiR172DP-T1-GE3 (Lead (Pb)-free and Halogen-free).

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Datasheet Details

Part number SIR172DP
Manufacturer Vishay
File Size 394.44 KB
Description N-Channel MOSFET
Datasheet download datasheet SIR172DP Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel 30-V (D-S) MOSFET SiR172DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 30 0.0089 at VGS = 10 V 0.0124 at VGS = 4.5 V ID (A)a, g 20 20 Qg (Typ.) 9.8 nC PowerPAK SO-8 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • Optimized for High-Side Synchronous Rectifier Operation • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC 6.15 mm S 1S 5.