Datasheet4U Logo Datasheet4U.com

SIS424DN - N-Channel MOSFET

Features

  • Halogen-free.
  • TrenchFET® Power MOSFET.
  • 100 % Rg Tested.
  • 100 % UIS Tested.

📥 Download Datasheet

Datasheet Details

Part number SIS424DN
Manufacturer Vishay
File Size 170.08 KB
Description N-Channel MOSFET
Datasheet download datasheet SIS424DN Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SIS43 SMT Power Induvtor DELTA ELECTRONICS
SIS0100 Black and White Image Sensor Camera Module Sanyo Semicon Device
SiS1057 JFET Operational Amplifier Silicon Supplies
SIS23C128 16K x 8 CMOS Mask ROM Silicon Integrated Systems
SIS23C128A 16K x 8 CMOS Mask ROM Silicon Integrated Systems

Other Datasheets by Vishay

Part Number Description
SIS426DN N-Channel 20V MOSFET
SiS427EDN P-Channel 30V MOSFET
SIS402DN N-Channel MOSFET
SIS406DN N-Channel 30V MOSFET
SiS407ADN P-Channel 20V MOSFET

Full PDF Text Transcription

Click to expand full text
New Product SiS424DN Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.0064 at VGS = 10 V 0.0089 at VGS = 4.5 V ID (A)a, g 35 9.5 nC 35 Qg (Typ.) FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested APPLICATIONS PowerPAK® 1212-8 • DC/DC Converter • POL • Notebook, System Power 3.30 mm D 3.30 mm S 1 2 3 S S G 4 D 8 7 6 5 D D D G Bottom View Ordering Information: SiS424DN-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Avalanche Current Avalanche Energy TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C L = 0.
Published: |