SiS427EDN Description
() at VGS = -10 V RDS(on) max. () at VGS = -6 V RDS(on) max. () at VGS = -4.5 V Qg typ.
SiS427EDN Key Features
- TrenchFET® power MOSFET
- 100 % Rg and UIS tested
- Typical ESD performance: 2500 V (HBM)
- Material categorization: for definitions of pliance please see .vishay./doc?99912