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SiS427EDN - P-Channel 30V MOSFET

Features

  • TrenchFET® power MOSFET.
  • 100 % Rg and UIS tested.
  • Typical ESD performance: 2500 V (HBM).
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiS427EDN
Manufacturer Vishay
File Size 575.84 KB
Description P-Channel 30V MOSFET
Datasheet download datasheet SiS427EDN Datasheet

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Full PDF Text Transcription

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www.vishay.com SiS427EDN Vishay Siliconix P-Channel 30 V (D-S) MOSFET PowerPAK® 1212-8 Single D D8 D7 D6 5 3.3 mm 1 Top View 3.3 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -10 V RDS(on) max. () at VGS = -6 V RDS(on) max. () at VGS = -4.5 V Qg typ. (nC) ID (A) d, g Configuration 1 2S 3S 4S G Bottom View -30 0.0106 0.0160 0.0213 22.6 -50 Single FEATURES • TrenchFET® power MOSFET • 100 % Rg and UIS tested • Typical ESD performance: 2500 V (HBM) • Material categorization: for definitions of compliance please see www.vishay.
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