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SISA10DN - N-Channel MOSFET

Features

  • TrenchFET® Gen IV Power MOSFET.
  • 100 % Rg and UIS Tested.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SISA10DN
Manufacturer Vishay
File Size 518.65 KB
Description N-Channel MOSFET
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New Product N-Channel 30 V (D-S) MOSFET SiSA10DN Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) 0.0037 at VGS = 10 V 0.0050 at VGS = 4.5 V ID (A)a, g 30 30 Qg (Typ.) 15.4 nC PowerPAK® 1212-8 3.30 mm S 1S 3.30 mm 2 S 3G 4 D 8D 7 D 6 D 5 Bottom View Ordering Information: SiSA10DN-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • TrenchFET® Gen IV Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.
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