SUD19N20-90 Description
SUD19N20-90 Vishay Siliconix N-Channel 200 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) 200 RDS(on) () 0.090 at VGS = 10 V 0.105 at VGS = 6 V ID (A) 19 17.5.
SUD19N20-90 Key Features
- TrenchFET® Power MOSFET
- 175 °C Junction Temperature
- PWM Optimized
- 100 % Rg Tested
- pliant to RoHS Directive 2002/95/EC