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SUD19P06-60L - P-Channel MOSFET

Key Features

  • TrenchFET® Power MOSFET.
  • 175 °C Junction Temperature S GDS Top View Drain Connected to Tab Ordering Information: SUD19P06-60L-E3 (Lead (Pb)-free) G D P-Channel MOSFET RoHS.

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New Product SUD19P06-60L Vishay Siliconix P-Channel 60-V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) - 60 0.060 at VGS = - 10 V 0.077 at VGS = - 4.5 V ID (A) - 19 - 16.8 Qg (Typ) 26 TO-252 FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature S GDS Top View Drain Connected to Tab Ordering Information: SUD19P06-60L-E3 (Lead (Pb)-free) G D P-Channel MOSFET RoHS COMPLIANT ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current, Single Pulse Repetitive Avalanche Energy, Single Pulsea L = 0.