SUM60030E - N-Channel 80V (D-S) MOSFET

Features

TrenchFET® power MOSFET.
Maximum 175 °C junction temperature.
Very low Qgd reduces power loss from passing through Vplateau.
100 % Rg and UIS tested.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Vishay

Datasheet Details

Part number	SUM60030E
Manufacturer	Vishay
File Size	191.20 KB
Description	N-Channel 80V (D-S) MOSFET
Datasheet	SUM60030E Datasheet
Additional preview pages of the SUM60030E datasheet.

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Full PDF Text Transcription

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www.vishay.com SUM60030E Vishay Siliconix N-Channel 80 V (D-S) MOSFET TO-263 Top View S D G PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 7.5 V Qg typ. (nC) ID (A) Configuration 80 0.0032 0.0034 94 120 d Single FEATURES • TrenchFET® power MOSFET • Maximum 175 °C junction temperature • Very low Qgd reduces power loss from passing through Vplateau • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.

Published: Oct 23, 2019 |