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SUP40010EL - N-Channel MOSFET

Key Features

  • TrenchFET® power MOSFET.
  • Maximum 175 °C junction temperature.
  • Qgd/Qgs ratio < 0.5.
  • Operable with logic-level gate drive.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription (Reference)

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www.vishay.com SUP40010EL Vishay Siliconix N-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) MAX. 0.0018 at VGS = 10 V 0.0021 at VGS = 4.5 V ID (A) d 120 120 Qg (TYP.) 150 TO-220AB Top View S D G Ordering Information: SUP40010EL-GE3 (lead (Pb)-free and halogen-free) FEATURES • TrenchFET® power MOSFET • Maximum 175 °C junction temperature • Qgd/Qgs ratio < 0.5 • Operable with logic-level gate drive • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.