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SUP50010EL - N-Channel MOSFET

Key Features

  • TrenchFET® Gen IV power MOSFET.
  • Maximum 175 °C junction temperature.
  • Very low Qgd reduces power loss from passing through Vplateau.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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www.vishay.com SUP50010EL Vishay Siliconix N-Channel 60 V (D-S) MOSFET TO-220AB Top View S D G PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 60 0.00173 0.0023 192 150 d Single FEATURES • TrenchFET® Gen IV power MOSFET • Maximum 175 °C junction temperature • Very low Qgd reduces power loss from passing through Vplateau • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.