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SUP53P06-20 - P-Channel 60-V (D-S) MOSFET

Datasheet Summary

Features

  • ID (A)a - 53 - 42 Qg (Typ. ) 76 nC.
  • TrenchFET® Power MOSFET.
  • 100 % UIS Tested RoHS.

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Datasheet Details

Part number SUP53P06-20
Manufacturer Vishay
File Size 193.90 KB
Description P-Channel 60-V (D-S) MOSFET
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www.DataSheet.co.kr New Product SUP53P06-20 Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) 0.0195 at VGS = - 10 V 0.025 at VGS = - 4.5 V TO-220AB FEATURES ID (A)a - 53 - 42 Qg (Typ.) 76 nC • TrenchFET® Power MOSFET • 100 % UIS Tested RoHS COMPLIANT APPLICATIONS • Load Switch S G DRAIN connected to TAB G D S Top View Ordering Information: SUP53P06-20-E3 (Lead (Pb)-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Avalanche Current Pulse Single Pulse Avalanche Energy Continuous Source-Drain Diode Current L = 0.
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