SUP60030E Description
SUP60030E Vishay Siliconix N-Channel 80 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) MAX. 0.0034 at VGS = 10 V 80 0.0036 at VGS = 7.5 V ID (A) d 120 120 Qg (TYP.) 94 TO-220AB Top View S D G Ordering Information: SUP60030E-GE3 (lead (Pb)-free and halogen-free).
SUP60030E Key Features
- TrenchFET® power MOSFET
- Maximum 175 °C junction temperature
- Very low Qgd reduces power loss from passing through Vplateau
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance