SUP60030E - N-Channel 80 V (D-S) MOSFET

Datasheet Summary

Features

TrenchFET® power MOSFET.
Maximum 175 °C junction temperature.
Very low Qgd reduces power loss from passing through Vplateau.
100 % Rg and UIS tested.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Vishay

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Datasheet Details

Part number	SUP60030E
Manufacturer	Vishay
File Size	147.92 KB
Description	N-Channel 80 V (D-S) MOSFET
Datasheet	SUP60030E Datasheet
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www.vishay.com SUP60030E Vishay Siliconix N-Channel 80 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) MAX. 0.0034 at VGS = 10 V 80 0.0036 at VGS = 7.5 V ID (A) d 120 120 Qg (TYP.) 94 TO-220AB Top View S D G Ordering Information: SUP60030E-GE3 (lead (Pb)-free and halogen-free) FEATURES • TrenchFET® power MOSFET • Maximum 175 °C junction temperature • Very low Qgd reduces power loss from passing through Vplateau • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.

Published: Mar 27, 2017 |