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New Product
P-Channel 30 V (D-S) MOSFET
Si4491EDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
0.0065 at VGS = - 10 V
- 30 0.0082 at VGS = - 6 V
0.0112 at VGS = - 4.5 V
ID a Qg (Typ.) - 29 - 23 66 nC - 20
SO-8
S1 S2 S3 G4
Top View
8D 7D 6D 5D
FEATURES
• Extended VGS range (± 25 V) for adaptor switch applications
• Extremely low RDS(on) • TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested • Typical ESD Performance: 4000 V (HBM)
• Material categorization: For definitions of compliance please see www.vishay.
Si4491EDY Datasheet
