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SiHB24N80AE
Vishay Siliconix
E Series Power MOSFET
D2PAK (TO-263)
GD S
D
G S
N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
850 VGS = 10 V
89 15 30 Single
0.160
FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance
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