SiHD5N50D
SiHD5N50D is D Series Power MOSFET manufactured by Vishay.
FEATURES
- Optimal design
- Low area specific on-resistance
- Low input capacitance (Ciss)
- Reduced capacitive switching losses
- High body diode ruggedness
- Avalanche energy rated (UIS)
Available
- Optimal efficiency and operation
- Low cost
- Simple gate drive circuitry
- Low figure-of-merit (FOM): Ron x Qg
- Fast switching
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Consumer electronics
- Displays (LCD or plasma TV)
- Server and tele power supplies
- SMPS
- Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
DPAK (TO-252) Si HD5N50D-E3 Si HD5N50D-GE3 Si HD5N50DT1-GE3 Si HD5N50DT4-GE3 Si HD5N50DT5-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Gate-Source Voltage AC (f > 1 Hz)
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current a
VGS at 10 V
TC = 25 °C TC = 100 °C
Linear Derating Factor
Single Pulse Avalanche Energy b
Maximum Power Dissipation
Operating Junction and Storage Temperature...
