Datasheet4U Logo Datasheet4U.com

SiHFD120 - Power MOSFET

General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • Dynamic dV/dt Rating.
  • Repetitive Avalanche Rated.
  • For Automatic Insertion.
  • End Stackable.
  • 175 °C Operating Temperature.
  • Fast Switching.
  • Ease of Paralleling.
  • Compliant to RoHS Directive 2002/95/EC Available RoHS.

📥 Download Datasheet

Full PDF Text Transcription for SiHFD120 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SiHFD120. For precise diagrams, and layout, please refer to the original PDF.

Power MOSFET IRFD120, SiHFD120 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V 16 4.4 7.7 Single D 0.27...

View more extracted text
gs (nC) Qgd (nC) Configuration 100 VGS = 10 V 16 4.4 7.7 Single D 0.27 HVMDIP S G D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • For Automatic Insertion • End Stackable • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

More Datasheets from Vishay

Part Number Description
SIHFD113 Power MOSFET
SiHFD214 Power MOSFET
SiHF065N60E Power MOSFET
SiHF074N65E Power MOSFET
SIHF12N60E Power MOSFET
SiHF15N60E Power MOSFET
SiHF18N50C Power MOSFET
SiHF22N60E Power MOSFET
SiHF22N65E Power MOSFET
SiHF23N60E Power MOSFET