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SiHFD120 - Power MOSFET

Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Features

  • Dynamic dV/dt Rating.
  • Repetitive Avalanche Rated.
  • For Automatic Insertion.
  • End Stackable.
  • 175 °C Operating Temperature.
  • Fast Switching.
  • Ease of Paralleling.
  • Compliant to RoHS Directive 2002/95/EC Available RoHS.

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Datasheet preview – SiHFD120

Datasheet Details

Part number SiHFD120
Manufacturer Vishay
File Size 1.41 MB
Description Power MOSFET
Datasheet download datasheet SiHFD120 Datasheet
Additional preview pages of the SiHFD120 datasheet.

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Full PDF Text Transcription

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Power MOSFET IRFD120, SiHFD120 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V 16 4.4 7.7 Single D 0.27 HVMDIP S G D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • For Automatic Insertion • End Stackable • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
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