SiHG44N65EF Datasheet | Vishay

FEATURES - Fast body diode MOSFET using E series technology - Reduced trr, Qrr, and IRRM - Low figure-of-merit (FOM): Ron x Qg - Low input capacitance (Ciss) - Low switching losses due to reduced Qrr - Ultra low gate charge (Qg) - Avalanche energy rated (UIS) - Material categorization: for definitions of pliance please see .vishay./doc?99912 APPLICATIONS - Telemunications - Server and tele power supplies - Lighting - High intensity discharge (HID) - Light emitting diodes (LEDs) - Consumer and puting - ATX power supplies - Industrial - Welding - Battery chargers - Renewable energy - Solar (PV inverters) - Switch mode power supplies (SMPS) - Applications using the following topologies - LLC - Phase shifted bridge (ZVS) - 3-level inverter - AC/DC bridge ORDERING INFORMATION Package Lead (Pb)-free and halogen-free TO-247AC Si HG44N65EF-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current a Linear derating factor VGS at 10 V TC = 25 °C TC = 100 °C VDS...