Datasheet4U Logo Datasheet4U.com

SiHLIZ34G - Power MOSFET

Datasheet Summary

Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.

Features

  • Isolated Package.
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RoHS.
  • Sink to Lead Creepage Distance 4.8 mm.

📥 Download Datasheet

Datasheet preview – SiHLIZ34G

Datasheet Details

Part number SiHLIZ34G
Manufacturer Vishay
File Size 1.63 MB
Description Power MOSFET
Datasheet download datasheet SiHLIZ34G Datasheet
Additional preview pages of the SiHLIZ34G datasheet.

📁 Similar Datasheet

  • SiHLIZ14G - Power MOSFET (Vishay Siliconix)
  • SiHL510 - Power MOSFET (Vishay Siliconix)
  • SiHL540 - Power MOSFET (Vishay Siliconix)
  • SIHLR014 - Power MOSFET (Vishay Siliconix)
  • SIHLU014 - Power MOSFET (Vishay Siliconix)
  • SIHLU024 - Power MOSFET (Vishay Siliconix)
  • SIHLU110 - Power MOSFET (Vishay Siliconix)
  • SIHLU120 - Power MOSFET (Vishay Siliconix)
  • SIHLZ14 - Power MOSFET (Vishay Siliconix)
  • SIHLZ44S - Power MOSFET (Vishay Siliconix)
Other Datasheets by Vishay

Full PDF Text Transcription

Click to expand full text
Power MOSFET IRLIZ34G, SiHLIZ34G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 5.0 V 35 7.1 25 Single 0.050 TO-220 FULLPAK D G GDS S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RoHS* • Sink to Lead Creepage Distance 4.8 mm COMPLIANT • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • Fast Switching • Ease of paralleling • Lead (Pb)-free DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Published: |