Datasheet4U Logo Datasheet4U.com

SIHLI540G - Power MOSFET

General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.

Key Features

  • Isolated Package.
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz).
  • Sink to Lead Creepage Distance = 4.8 mm.
  • Logic-Level Gate Drive.
  • RDS (on) Specified at VGS = 4 V and 5 V.
  • Fast Switching.
  • Ease of Paralleling.
  • Compliant to RoHS Directive 2002/95/EC.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SiHLIZ14G Power MOSFET Vishay Siliconix
SiHL510 Power MOSFET Vishay Siliconix
SiHL540 Power MOSFET Vishay Siliconix
SIHLR014 Power MOSFET Vishay Siliconix
SIHLU014 Power MOSFET Vishay Siliconix

Other Datasheets by Vishay

Part Number Description
SIHLI520G Power MOSFET
SIHLI530G Power MOSFET
SiHLI640G ower MOSFET
SIHLIZ24G Power MOSFET
SiHLIZ34G Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Power MOSFET IRLI540G, SiHLI540G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 5 V 64 9.4 27 Single 0.077 TO-220 FULLPAK D GDS G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Logic-Level Gate Drive • RDS (on) Specified at VGS = 4 V and 5 V • Fast Switching • Ease of Paralleling • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.