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SIHLI520G Datasheet Power MOSFET

Manufacturer: Vishay

Overview: Power MOSFET IRLI520G, SiHLI520G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 5 V 12 3.0 7.1 Single 0.

General Description

Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in mercial-industrial applications.

The molding pound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink.

Key Features

  • Isolated Package.
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz).
  • Sink to Lead Creepage Distance = 4.8 mm.
  • Logic-Level Gate Drive.
  • RDS (on) Specified at VGS = 4 V and 5 V.
  • Fast Switching.
  • Ease of Paralleling.
  • Lead (Pb)-free Available Available RoHS.

SIHLI520G Distributor