SiHLI640G - ower MOSFET

Product Overview

Vishay

Datasheet Details

Part number	SiHLI640G
Manufacturer	Vishay
File Size	1.42 MB
Description	ower MOSFET
Datasheet	SiHLI640G Datasheet
Additional preview pages of the SiHLI640G datasheet.

Product details

Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Features

Isolated Package.
High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz).
Sink to Lead Creepage Dist. 4.8 mm.
Logic-Level Gate Drive.
RDS(on) Specified at VGS = 4V and 5 V.
Fast Switching.
Ease of paralleling.
Lead (Pb)-free Available Available RoHS.

📁 Similar Datasheet

SiHLIZ14G - Power MOSFET (Vishay Siliconix)
SiHL510 - Power MOSFET (Vishay Siliconix)
SiHL540 - Power MOSFET (Vishay Siliconix)
SIHLR014 - Power MOSFET (Vishay Siliconix)
SIHLU014 - Power MOSFET (Vishay Siliconix)
SIHLU024 - Power MOSFET (Vishay Siliconix)
SIHLU110 - Power MOSFET (Vishay Siliconix)
SIHLU120 - Power MOSFET (Vishay Siliconix)

Other Datasheets by Vishay

SIHLI520G - Power MOSFET
SIHLI530G - Power MOSFET
SIHLI540G - Power MOSFET
SIHLIZ24G - Power MOSFET
SiHLIZ34G - Power MOSFET
SiHLIZ44G - Power MOSFET

Published: Oct 9, 2018 |