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SiHLI640G - ower MOSFET

General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.

Key Features

  • Isolated Package.
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz).
  • Sink to Lead Creepage Dist. 4.8 mm.
  • Logic-Level Gate Drive.
  • RDS(on) Specified at VGS = 4V and 5 V.
  • Fast Switching.
  • Ease of paralleling.
  • Lead (Pb)-free Available Available RoHS.

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Full PDF Text Transcription (Reference)

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Power MOSFET IRLI640G, SiHLI640G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 5.0 V 66 9.0 38 Single 0.18 TO-220 FULLPAK D G GDS S N-Channel MOSFET FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4V and 5 V • Fast Switching • Ease of paralleling • Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.