SiHLI640G
SiHLI640G is ower MOSFET manufactured by Vishay.
Power MOSFET
IRLI640G, SiHLI640G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
200 VGS = 5.0 V
66 9.0 38 Single
TO-220 FULLPAK
S N-Channel MOSFET
Features
- Isolated Package
- High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
- Sink to Lead Creepage Dist. 4.8 mm
- Logic-Level Gate Drive
- RDS(on) Specified at VGS = 4V and 5 V
- Fast Switching
- Ease of paralleling
- Lead (Pb)-free Available
Available
RoHS-
PLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness....
