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SiHP22N60E
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
650 VGS = 10 V
86 11 24 Single
0.18
TO-220AB
D
S D G
G
S N-Channel MOSFET
FEATURES
• Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
Available
• Material categorization: for definitions of
compliance please see www.vishay.