SiHP22N60EF Description
SiHP22N60EF Vishay Siliconix EF Series Power MOSFET With Fast Body Diode D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 96 9 21 Single 0.158.
SiHP22N60EF Key Features
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
- Material categorization: for definitions of pliance please see .vishay./doc?99912