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SiHP22N60S
Vishay Siliconix
S Series Power MOSFET
PRODUCT SUMMARY
VDS at TJ max. (V) RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
650 VGS = 10 V
98 17 25 Single
0.190
TO-220AB
D
S D G
G
S N-Channel MOSFET
FEATURES • Generation one • High EAR capability • Lower figure-of-merit Ron x Qg • 100 % avalanche tested • Ultra low Ron • dV/dt ruggedness • Ultra low gate charge (Qg) • Material categorization: for definitions of compliance
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