SiHP22N60S Overview
SiHP22N60S Vishay Siliconix S Series Power MOSFET PRODUCT SUMMARY VDS at TJ max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 98 17 25 Single 0.190 TO-220AB D S D G G S N-Channel MOSFET.
SiHP22N60S Key Features
- Generation one
- High EAR capability
- Lower figure-of-merit Ron x Qg
- 100 % avalanche tested
- Ultra low Ron
- dV/dt ruggedness
- Ultra low gate charge (Qg)
- Material categorization: for definitions of pliance