SiS5712DN Datasheet | Vishay

FEATURES - Trench FET® Gen V power MOSFET - Very low RDS - Qg figure of merit (FOM) - Tuned for the lowest RDS - Qoss FOM - 100 % Rg and UIS tested - Material categorization: for definitions of pliance please see .vishay./doc?99912 APPLICATIONS - Primary side switch - DC/DC converters - Motor drive control Power PAK 1212-8 SIS5712DN-T1-GE3 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current (t = 100 μs) Continuous source-drain diode current Single pulse avalanche current Single pulse avalanche Energy Maximum power dissipation Operating junction and storage temperature range Soldering remendations (peak temperature) d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 m H TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS IDM IS IAS EAS TJ, Tstg LIMIT 150 ± 20 18 g 14.6 5.6 b, c 4.5 b, c 25 18 g 3.1 b, c 10 5 39.1 25 3.7 b, c 2.4 b, c -55 to +150 260 UNIT V A m J W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum junction to ambient b, f Maximum junction to case (drain) t ≤ 10 s Steady...