SiS5712DN Description
(Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 7.5 V Qg typ. (nC) ID (A) Configuration ORDERING INFORMATION Package Lead (Pb)-free and halogen-free 1 2S 3S 4S G Bottom View 150 0.0555 0.0624 5.8 18 Single.
SiS5712DN Key Features
- TrenchFET® Gen V power MOSFET
- Very low RDS
- Qg figure of merit (FOM)
- Tuned for the lowest RDS
- Qoss FOM
- 100 % Rg and UIS tested