SiSB46DN Datasheet | Vishay

FEATURES - Trench FET® Gen IV power MOSFET - Tuned for the lowest RDS - Qoss FOM - 100 % Rg and UIS tested - Qgd / Qgs ratio < 1 optimizes switching characteristics - Material categorization: for definitions of pliance please see .vishay./doc?99912 APPLICATIONS - Synchronous rectification - DC/DC converters - Motor drive switch - Battery and load switch D1 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 100 μs) Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 m H TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Remendations (Peak temperature) c, d VDS VGS IDM IS IAS EAS TJ,...