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SiSB46DN - N-Channel MOSFET

Features

  • TrenchFET® Gen IV power MOSFET.
  • Tuned for the lowest RDS - Qoss FOM.
  • 100 % Rg and UIS tested.
  • Qgd / Qgs ratio < 1 optimizes switching characteristics.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiSB46DN
Manufacturer Vishay
File Size 594.01 KB
Description N-Channel MOSFET
Datasheet download datasheet SiSB46DN Datasheet
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Full PDF Text Transcription

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www.vishay.com SiSB46DN Vishay Siliconix Dual N-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) () MAX. 0.01171 at VGS = 10 V 0.01580 at VGS = 4.5 V ID (A) f 34 29.4 Qg (TYP.) 6.8 nC PowerPAK® 1212-8 Dual D2 D2 6 D1 7 D1 8 5 3.3 mm 1 Top View 3.3 mm 1 4 G2 3 S2 2 G1 S1 Bottom View Ordering Information: SiSB46DN-T1-GE3 (lead (Pb)-free and halogen-free) FEATURES • TrenchFET® Gen IV power MOSFET • Tuned for the lowest RDS - Qoss FOM • 100 % Rg and UIS tested • Qgd / Qgs ratio < 1 optimizes switching characteristics • Material categorization: for definitions of compliance please see www.vishay.
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