SiSD4402DN Datasheet | Vishay

FEATURES - Trench FET® Gen IV power MOSFET - Very low RDS x Qg figure-of-merit (FOM) - Source flip technology, enhance thermal performance - 100 % Rg and UIS tested - Material categorization: for definitions of pliance please see .vishay./doc?99912 APPLICATIONS - DC/DC converter - Synchronous rectification - Battery management - Oring and load switch S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Power PAK 1212-F Si SD4402DN-T1-UE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current (VGS = 10 V, t = 100 μs) Continuous source-drain diode current Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation Operating junction and storage temperature range Soldering remendations (peak temperature) d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 m H TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS IDM IS IAS EAS TJ, Tstg LIMIT 40 +20, -16 124 99 38 b, c 31 b, c 350 52 4.9 b, c 33 53 57 36 5.4 b, c 3.5 b, c -55 to +150 UNIT V A m J W...