SiSD5110DN Overview
SiSD5110DN Vishay Siliconix N-Channel 100 V (D-S) MOSFET 3.3 mm PowerPAK® 1212-F D 5 D 6 D 7 D 8 G 1 3.3 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 7.5 V Qg typ.
SiSD5110DN Key Features
- TrenchFET® Gen V power MOSFET
- Very low RDS x Qg figure-of-merit (FOM)
- Source flip technology, enhance thermal
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance