SiSD5110DN
SiSD5110DN is N-Channel 100V MOSFET manufactured by Vishay.
FEATURES
- Trench FET® Gen V power MOSFET
- Very low RDS x Qg figure-of-merit (FOM)
- Source flip technology, enhance thermal performance
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- DC/DC converter
- Synchronous rectification
- Battery management
- Oring and load switch
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
Power PAK 1212-F Si SD5110DN-T1-UE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
TC = 25 °C
Continuous drain current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed drain current (t = 100 μs) Continuous source-drain diode current Single pulse avalanche current Single pulse avalanche energy
Maximum power dissipation
Operating junction and storage temperature range Soldering remendations (peak temperature) d, e
TC = 25 °C TA = 25 °C
L = 0.1 m H
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
IDM IS IAS EAS
TJ, Tstg
LIMIT 100 ± 20 55 44 17 b, c
14 b,...
