SiSF00DN Overview
(Ω) at VGS = 10 V RS1S2(on) max. (Ω) at VGS = 4.5 V Qg typ.
SiSF00DN Key Features
- TrenchFET® Gen IV power MOSFET
- Very low source-to-source on resistance
- Integrated mon-drain n-channel MOSFETs
- 100 % Rg and UIS tested
- Optimizes circuit layout for bi-directional current flow
- Material categorization: for definitions of pliance please see .vishay./doc?99912